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STQ3N45K3-AP Fiches technique(PDF) 4 Page - STMicroelectronics

No de pièce STQ3N45K3-AP
Description  Very low intrinsic capacitance
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STQ3N45K3-AP Fiches technique(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STQ3N45K3-AP
4/14
DocID024887 Rev 1
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4. On /off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
450
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = 450 V
VDS = 450 V, TC=125 °C
1
50
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V
± 10
µA
VGS(th)
Gate threshold voltage VDS = VGS, ID = 50 µA
3
3.75
4.5
V
RDS(on
Static drain-source on
resistance
VGS = 10 V, ID = 0.6 A
3.3
4
Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VDS = 50 V, f = 1 MHz, VGS = 0
-164
-
pF
Coss
Output capacitance
-
17
-
pF
Crss
Reverse transfer
capacitance
-3
-
pF
Co(tr)
(1)
1.
Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss
when VDS increases from 0 to 80% VDSS
Equivalent
capacitance time
related
VDS = 0 to 360 V, VGS = 0
-13
-
pF
Co(er)
(2)
2.
Coss eq. energy related is defined as a constant equivalent capacitance giving the same charging time as
Coss when VDS increases from 0 to 80% VDSS
Equivalent
capacitance energy
related
-18
-
pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
8
-
Ω
Qg
Total gate charge
VDD = 360 V, ID = 1.8 A,
VGS = 10 V
(see Figure 16)
-9.5
-
nC
Qgs
Gate-source charge
-
2
-
nC
Qgd
Gate-drain charge
-
6
-
nC


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