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STQ3N45K3-AP Fiches technique(PDF) 3 Page - STMicroelectronics |
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STQ3N45K3-AP Fiches technique(HTML) 3 Page - STMicroelectronics |
3 / 14 page DocID024887 Rev 1 3/14 STQ3N45K3-AP Electrical ratings 14 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 450 V VGS Gate- source voltage ± 30 V ID Drain current (continuous) at TC = 25 °C 0.6 A IDM (1) 1. Pulse width limited by safe operating area. Drain current (pulsed) 2.4 A PTOT Total dissipation at TC = 25 °C 3 W IAR (2) 2. Pulse width limited by Tj max. Avalanche current, repetitive or not-repetitive 0.6 A EAS (3) 3. Starting Tj = 25 °C, ID = IAR, VDD = 50 V. Single pulse avalanche energy (starting Tj = 25°C, ID = IAR, VDD = 50V) 45 mJ dv/dt (4) 4. ISD ≤ 0.6 A, di/dt ≤ 400 A/µs, VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS. Peak diode recovery voltage slope 12 V/ns Vesd(g-s) G-S ESD (HBM C = 100 pF, R = 1.5 k Ω)1000 V Tstg Storage temperature -55 to 150 °C Tj Max. operating junction temperature 150 °C Table 3. Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-ambient 42 °C/W |
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