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STQ3N45K3-AP Fiches technique(PDF) 1 Page - STMicroelectronics

No de pièce STQ3N45K3-AP
Description  Very low intrinsic capacitance
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STQ3N45K3-AP Fiches technique(HTML) 1 Page - STMicroelectronics

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This is information on a product in full production.
June 2013
DocID024887 Rev 1
1/14
STQ3N45K3-AP
N-channel 450 V - 3.3
Ω typ., 0.6 A Zener-protected,
SuperMESH3™ Power MOSFET in a TO-92 package
Datasheet
- production data
Figure 1. Internal schematic diagram
Features
• 100% avalanche tested
• Extremely high dv/dt capability
• Gate charge minimized
• Very low intrinsic capacitance
• Improved diode reverse recovery
characteristics
• Zener-protected
Applications
• Switching applications
Description
This SuperMESH3™ Power MOSFET is the
result of improvements applied to
STMicroelectronics’ SuperMESH™ technology,
combined with a new optimized vertical structure.
This device boasts an extremely low on-
resistance, superior dynamic performance and
high avalanche capability, rendering it suitable for
the most demanding applications.
AM01476v1
TO-92
1
2
3
Order code
VDSS
RDS(on)
max
ID
Pw
STQ3N45K3-AP
450 V
< 4
Ω
0.6 A
3 W
Table 1. Device summary
Order code
Marking
Package
Packaging
STQ3N45K3-AP
3N45K3
TO-92
Ammopak
www.st.com


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