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STQ3N45K3-AP Fiches technique(PDF) 1 Page - STMicroelectronics |
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STQ3N45K3-AP Fiches technique(HTML) 1 Page - STMicroelectronics |
1 / 14 page This is information on a product in full production. June 2013 DocID024887 Rev 1 1/14 STQ3N45K3-AP N-channel 450 V - 3.3 Ω typ., 0.6 A Zener-protected, SuperMESH3™ Power MOSFET in a TO-92 package Datasheet - production data Figure 1. Internal schematic diagram Features • 100% avalanche tested • Extremely high dv/dt capability • Gate charge minimized • Very low intrinsic capacitance • Improved diode reverse recovery characteristics • Zener-protected Applications • Switching applications Description This SuperMESH3™ Power MOSFET is the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. This device boasts an extremely low on- resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications. AM01476v1 TO-92 1 2 3 Order code VDSS RDS(on) max ID Pw STQ3N45K3-AP 450 V < 4 Ω 0.6 A 3 W Table 1. Device summary Order code Marking Package Packaging STQ3N45K3-AP 3N45K3 TO-92 Ammopak www.st.com |
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