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STQ3N45K3-AP Fiches technique(PDF) 6 Page - STMicroelectronics |
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STQ3N45K3-AP Fiches technique(HTML) 6 Page - STMicroelectronics |
6 / 14 page Electrical characteristics STQ3N45K3-AP 6/14 DocID024887 Rev 1 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on resistance ID 100 10 1 0.1 0.1 1 100 VDS(V) 10 (A) Oper ation in this area is Limited by max R DS(on) 10µs 100µs 1ms 10ms Tj=150°C Tc=25°C Single pulse 0.01 0.001 AM09204v1 ID 1.5 1.0 0.5 0 0 10 VDS(V) 20 (A) 5 15 25 2.0 5V 6V 7V VGS=10V 3.0 2.5 3.5 AM09207v1 ID 1.5 1.0 0.5 0 0 4 VGS(V) 8 (A) 2 6 2.0 2.5 1 3 5 7 9 VDS=15V AM09208v1 VGS 6 4 2 0 0 2 Qg(nC) (V) 8 8 4 6 10 VDD=360V ID=1.8A 10 12 300 250 200 0 350 VDS 150 100 50 AM09209v1 RDS(on) 3.2 3.0 2.8 2.6 0.2 0.6 ID(A) ( Ω) 0.4 0.8 3.4 3.6 3.8 4.0 VGS=10V 4.2 1.2 1.0 1.4 1.6 1.8 AM09210v1 |
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