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STQ2LN60K3-AP Fiches technique(PDF) 5 Page - STMicroelectronics

No de pièce STQ2LN60K3-AP
Description  N-channel 600 V, 4 廓 typ., 0.6 A MDmesh??K3 Power MOSFET in a TO-92 package
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STQ2LN60K3-AP Fiches technique(HTML) 5 Page - STMicroelectronics

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STQ2LN60K3-AP
Electrical characteristics
DocID023499 Rev 3
5/13
Table 7: Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VDD = 300 V, ID = 1 A,
RG
= 4.7 Ω, VGS = 10 V
(see Figure 15: "Test circuit for
resistive load switching times"
and Figure 20: "Switching time
waveform")
-
10
-
ns
tr
Rise time
-
8.5
-
ns
td(off)
Turn-off delay time
-
23.5
-
ns
tf
Fall time
-
21
-
ns
Table 8: Source-drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD(1)
Source-drain current
-
0.6
A
ISDM(1)
Source-drain current
(pulsed)
-
2.4
A
VSD(2)
Forward on voltage
ISD = 2 A, VGS = 0 V
-
1.5
V
trr
Reverse recovery time
ISD = 2 A, di/dt = 100 A/µs
VDD = 60 V
(see Figure 17: "Test circuit for
inductive load switching and
diode recovery times")
-
200
ns
Qrr
Reverse recovery charge
-
800
nC
IRRM
Reverse recovery current
-
8
A
trr
Reverse recovery time
ISD = 2 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 17: "Test circuit for
inductive load switching and
diode recovery times")
-
230
ns
Qrr
Reverse recovery charge
-
950
nC
IRRM
Reverse recovery current
-
8.5
A
Notes:
(1)Pulse width limited by safe operating area.
(2)Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Table 9: Gate-source Zener diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)GSO
Gate-source breakdown voltage
IGS= ±1 mA, ID= 0 A
30
-
-
V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD
performance of the device. The Zener voltage facilitates efficient and cost-effective device
integrity protection,thus eliminating the need for additional external componentry.


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