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STQ1HN60K3-AP Fiches technique(PDF) 5 Page - STMicroelectronics |
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STQ1HN60K3-AP Fiches technique(HTML) 5 Page - STMicroelectronics |
5 / 14 page DocID024427 Rev 1 5/14 STQ1HN60K3-AP Electrical characteristics The built-in back-to-back Zener diodes have been specifically designed to enhance not only the device’s ESD capability, but also to make them capable of safely absorbing any voltage transients that may occasionally be applied from gate to source. In this respect, the Zener voltage is appropriate to achieve efficient and cost-effective protection of device integrity. The integrated Zener diodes thus eliminate the need for external components. Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max Unit td(on) Turn-on delay time VDD = 300 V, ID = 0.6 A, RG = 4.7 Ω, VGS = 10 V (see Figure 10) -7 - ns tr Rise time - 10 - ns td(off) Turn-off-delay time - 23 - ns tf Fall time - 31 - ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max Unit ISD Source-drain current - 0.4 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) - 1.6 A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 1.2 A, VGS = 0 - 1.6 V trr Reverse recovery time ISD = 1.2 A, di/dt = 100 A/µs VDD= 60 V (see Figure 11) -180 ns Qrr Reverse recovery charge - 500 nC IRRM Reverse recovery current - 5.6 A trr Reverse recovery time ISD = 1.2 A, di/dt = 100 A/µs VDD= 60 V TJ = 150 °C (see Figure 11) -200 ns Qrr Reverse recovery charge - 570 nC IRRM Reverse recovery current - 6 A Table 8. Gate-source Zener diode Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)GSO Gate-source breakdown voltage IGS= ± 1 mA, ID=0 30 - - V |
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