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STQ1HN60K3-AP Fiches technique(PDF) 5 Page - STMicroelectronics

No de pièce STQ1HN60K3-AP
Description  Gate charge minimized
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STQ1HN60K3-AP Fiches technique(HTML) 5 Page - STMicroelectronics

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STQ1HN60K3-AP
Electrical characteristics
The built-in back-to-back Zener diodes have been specifically designed to enhance not only
the device’s ESD capability, but also to make them capable of safely absorbing any voltage
transients that may occasionally be applied from gate to source. In this respect, the Zener
voltage is appropriate to achieve efficient and cost-effective protection of device integrity.
The integrated Zener diodes thus eliminate the need for external components.
Table 6. Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
td(on)
Turn-on delay time
VDD = 300 V, ID = 0.6 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 10)
-7
-
ns
tr
Rise time
-
10
-
ns
td(off)
Turn-off-delay time
-
23
-
ns
tf
Fall time
-
31
-
ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
ISD
Source-drain current
-
0.4
A
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current (pulsed)
-
1.6
A
VSD
(2)
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 1.2 A, VGS = 0
-
1.6
V
trr
Reverse recovery time
ISD = 1.2 A, di/dt = 100 A/µs
VDD= 60 V
(see Figure 11)
-180
ns
Qrr
Reverse recovery charge
-
500
nC
IRRM
Reverse recovery current
-
5.6
A
trr
Reverse recovery time
ISD = 1.2 A, di/dt = 100 A/µs
VDD= 60 V TJ = 150 °C
(see Figure 11)
-200
ns
Qrr
Reverse recovery charge
-
570
nC
IRRM
Reverse recovery current
-
6
A
Table 8. Gate-source Zener diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
V(BR)GSO
Gate-source breakdown
voltage
IGS= ± 1 mA, ID=0
30
-
-
V


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