Moteur de recherche de fiches techniques de composants électroniques
  French  ▼
ALLDATASHEET.FR

X  

STQ1HN60K3-AP Fiches technique(PDF) 4 Page - STMicroelectronics

No de pièce STQ1HN60K3-AP
Description  Gate charge minimized
Download  14 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STQ1HN60K3-AP Fiches technique(HTML) 4 Page - STMicroelectronics

  STQ1HN60K3-AP Datasheet HTML 1Page - STMicroelectronics STQ1HN60K3-AP Datasheet HTML 2Page - STMicroelectronics STQ1HN60K3-AP Datasheet HTML 3Page - STMicroelectronics STQ1HN60K3-AP Datasheet HTML 4Page - STMicroelectronics STQ1HN60K3-AP Datasheet HTML 5Page - STMicroelectronics STQ1HN60K3-AP Datasheet HTML 6Page - STMicroelectronics STQ1HN60K3-AP Datasheet HTML 7Page - STMicroelectronics STQ1HN60K3-AP Datasheet HTML 8Page - STMicroelectronics STQ1HN60K3-AP Datasheet HTML 9Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 4 / 14 page
background image
Electrical characteristics
STQ1HN60K3-AP
4/14
DocID024427 Rev 1
2
Electrical characteristics
(Tcase =25 °C unless otherwise specified)
Table 4. On /off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
600
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = 600 V
VDS = 600 V, TC=125 °C
1
50
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V
±10
µA
VGS(th)
Gate threshold voltage VDS = VGS, ID = 50 µA
2
3.75
4.5
V
RDS(on)
Static drain-source on-
resistance
VGS = 10 V, ID = 0.6 A
6.7
8
Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
-140
-
pF
Coss
Output capacitance
-
13
-
pF
Crss
Reverse transfer
capacitance
-2
-
pF
Co(tr)
(1)
1.
Co(tr) is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS
Equivalent
capacitance time
related
VDS = 0 to 480 V, VGS = 0
-9
-
pF
Co(tr)
(2)
2.
Co(tr) is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS
Equivalent
capacitance energy
related
-6
-
pF
Rg
Gate input resistance
f=1 MHz open drain
-
10
-
Ω
Qg
Total gate charge
VDD = 480 V, ID = 1.2 A,
VGS = 10 V
(see Figure 16)
-9.5
-
nC
Qgs
Gate-source charge
-
1.5
-
nC
Qgd
Gate-drain charge
-
6.5
-
nC


Numéro de pièce similaire - STQ1HN60K3-AP

FabricantNo de pièceFiches techniqueDescription
logo
STMicroelectronics
STQ1HNC60 STMICROELECTRONICS-STQ1HNC60 Datasheet
116Kb / 6P
   N-CHANNEL 600V - 7ohm - 0.4A TO-92 PowerMesh?줚I MOSFET
STQ1HNK60R STMICROELECTRONICS-STQ1HNK60R Datasheet
748Kb / 13P
   N-CHANNEL 600V - 8 - 1A DPAK / IPAK / TO-92 SuperMESH Power MOSFET
STQ1HNK60R STMICROELECTRONICS-STQ1HNK60R Datasheet
485Kb / 15P
   N-CHANNEL 600V - 8-ohm - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH-TM MOSFET
STQ1HNK60R STMICROELECTRONICS-STQ1HNK60R Datasheet
429Kb / 15P
   N-CHANNEL 600V - 8廓 - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH MOSFET
STQ1HNK60R-AP STMICROELECTRONICS-STQ1HNK60R-AP Datasheet
748Kb / 13P
   N-CHANNEL 600V - 8 - 1A DPAK / IPAK / TO-92 SuperMESH Power MOSFET
More results

Description similaire - STQ1HN60K3-AP

FabricantNo de pièceFiches techniqueDescription
logo
STMicroelectronics
STP3NK50Z STMICROELECTRONICS-STP3NK50Z Datasheet
626Kb / 14P
   Gate charge minimized
August 2013 Rev 1
STW9NK95Z STMICROELECTRONICS-STW9NK95Z Datasheet
312Kb / 12P
   Gate charge minimized
July 2008 Rev 2
STDLED656 STMICROELECTRONICS-STDLED656 Datasheet
1Mb / 22P
   Gate charge minimized
March 2013 Rev 1
STDLED625H STMICROELECTRONICS-STDLED625H Datasheet
1Mb / 17P
   Gate charge minimized
March 2013 Rev 1
STF16N50U STMICROELECTRONICS-STF16N50U Datasheet
691Kb / 12P
   Gate charge minimized
September 2010 Rev 1
STU3N45K3 STMICROELECTRONICS-STU3N45K3 Datasheet
838Kb / 14P
   Gate charge minimized
June 2013 Rev 3
STD3N40K3 STMICROELECTRONICS-STD3N40K3 Datasheet
990Kb / 16P
   Gate charge minimized
July 2012 Rev 1
STDLED625 STMICROELECTRONICS-STDLED625 Datasheet
1Mb / 18P
   Gate charge minimized
August 2013 Rev 1
STF11N65K3 STMICROELECTRONICS-STF11N65K3 Datasheet
815Kb / 13P
   Gate charge minimized
October 2011 Rev 2
logo
Ruichips Semiconductor ...
RU4H10R RUICHIPS-RU4H10R Datasheet
300Kb / 9P
   N-Channel Advanced Power MOSFET Gate charge minimized
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14


Fiches technique Télécharger

Go To PDF Page


Lien URL




Politique de confidentialité
ALLDATASHEET.FR
ALLDATASHEET vous a-t-il été utile ?  [ DONATE ] 

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Echange de liens   |   Fabricants
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com