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STQ1HN60K3-AP Fiches technique(PDF) 3 Page - STMicroelectronics |
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3 / 14 page DocID024427 Rev 1 3/14 STQ1HN60K3-AP Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain- source voltage 600 V VGS Gate- source voltage ± 30 V ID (1) 1. Current limited by package power capability Drain current (continuous) at TC = 25 °C 0.4 A ID (1) Drain current (continuous) at TC = 100 °C 0.25 A IDM (2) 2. Pulse width limited by safe operating area Drain current (pulsed) 1.60 A PTOT Total dissipation at TC = 25 °C 3 W IAR Avalanche current, repetitive or not- repetitive (pulse width limited by TJ max) 1.2 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) 60 mJ dv/dt(3) 3. ISD ≤ 1.2 A, di/dt ≤ 400 A/µs,VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS. Peak diode recovery voltage slope 5 V/ns TJ Operating junction temperature -55 to 150 °C Tstg Storage temperature °C Table 3. Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max. 42 °C/W |
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