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STGWA40S120DF3 Fiches technique(PDF) 5 Page - STMicroelectronics

No de pièce STGWA40S120DF3
Description  Trench gate field-stop IGBT, S series 1200 V, 40 A low drop
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGWA40S120DF3 Fiches technique(HTML) 5 Page - STMicroelectronics

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DocID026373 Rev 2
5/18
STGW40S120DF3, STGWA40S120DF3
Electrical characteristics
18
Table 6. IGBT switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VCE = 600 V, IC = 40 A,
VGE = 15 V, RG= 15 Ω
(see Figure 29)
-35
-
ns
tr
Current rise time
-
15
-
ns
(di/dt)on
Turn-on current slope
-
2100
-
A/µs
td(off)
Turn-off delay time
-
148
-
ns
tf
Current fall time
-
264
-
ns
Eon
(1)
1.
Energy losses include reverse recovery of the diode.
Turn-on switching losses
-
1.433
-
mJ
Eoff
(2)
2.
Turn-off losses also include the tail of the collector current.
Turn-off switching losses
-
3.83
-
mJ
Ets
Total switching losses
-
5.26
-
mJ
td(on)
Turn-on delay time
VCE = 600 V, IC = 40 A,
RG = 15 Ω, VGE = 15 V,
TJ = 175 °C, (see Figure 29)
-32
-
ns
tr
Current rise time
-
18
-
ns
(di/dt)on
Turn-on current slope
-
1800
-
A/µs
td(off)
Turn-off delay time
-
154
-
ns
tf
Current fall time
-
4.46
-
ns
Eon
(1)
Turn-on switching losses
-
2.9
-
mJ
Eoff
(2)
Turn-off switching losses
-
5.6
-
mJ
Ets
Total switching losses
-
8.5
-
mJ
tsc
Short-circuit withstand time
VCC ≤ 600 V, VGE= 15 V,
TJstart ≤ 150 °C, VP < 1200 V
10
-
µs
Table 7. Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
trr
Reverse recovery time
IF = 40 A, VR = 600 V,
VGE = 15 V,
di/dt = 1000 A/µs,
(see Figure 29)
-
355
-
ns
Qrr
Reverse recovery charge
-
2575
-
nC
Irrm
Reverse recovery current
-
25
-
A
dlrr/ /dt
Peak rate of fall of reverse
recovery current during tb
-
1110
-
A/µs
Err
Reverse recovery energy
-
1.12
-
mJ
trr
Reverse recovery time
IF = 40 A, VR = 600 V,
VGE = 15 V, TJ = 175 °C,
di/dt = 1000 A/µs,
(see Figure 29)
-
667
-
ns
Qrr
Reverse recovery charge
-
8500
-
nC
Irrm
Reverse recovery current
-
37
-
A
dIrr/ /dt
Peak rate of fall of reverse
recovery current during tb
-
450
-
A/µs
Err
Reverse recovery energy
-
3.9
-
mJ


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