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STGW40H120DF2 Fiches technique(PDF) 3 Page - STMicroelectronics |
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3 / 17 page STGW40H120DF2, STGWA40H120DF2 Electrical ratings DocID023753 Rev 5 3/17 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VGE = 0) 1200 V IC Continuous collector current at TC = 25 °C 80 A IC Continuous collector current at TC = 100 °C 40 A ICP(1) Pulsed collector current 160 A VGE Gate-emitter voltage ±20 V VGE Transient gate-emitter voltage (tp ≤ 10 μs, D ≤ 0.01) ±30 V IF Continuous forward current at TC = 25 °C 80 A IF Continuous forward current at TC = 100 °C 40 A IFP(1) Pulsed forward current 160 A PTOT Total dissipation at TC = 25 °C 468 W TSTG Storage temperature range -55 to 150 °C TJ Operating junction temperature range -55 to 175 °C Notes: (1)Pulse width limited by maximum junction temperature. Table 3: Thermal data Symbol Parameter Value Unit RthJC Thermal resistance junction-case IGBT 0.32 °C/W RthJC Thermal resistance junction-case diode 1.3 °C/W RthJA Thermal resistance junction-ambient 50 °C/W |
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