STGW35HF60WDI datasheet(7/15 Pages) STMICROELECTRONICS

No de pièce	STGW35HF60WDI

Description	35 A, 600 V ultrafast IGBT with low drop diode

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Fabricant	STMICROELECTRONICS [STMicroelectronics]

Site Internet	http://www.st.com

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7 / 15 page

STGW35HF60WDI

Electrical characteristics

Doc ID 16090 Rev 3

7/15

Figure 8.

Gate charge vs. gate-emitter

voltage

Figure 9.

Capacitance variations

Figure 10.

Switching losses vs temperature

Figure 11.

Switching losses vs gate resistance

Figure 12.

Switching losses vs collector

current

Figure 13.

Diode forward on voltage

0

4

8

12

16

0

30

60

90

120

150

QG (nC)

V GE (V)

V CC = 400 V

IC = 20 A

AM10153V1

0

1000

2000

3000

4000

5000

0

10

20

304050

V CE (V)

C (pF)

f = 1 MHz

V GE = 0

C ies

C oes

C res

AM10154V1

150

200

250

300

350

400

450

25

50

75

100

125

TJ (°C)

E (µJ)

V CE = 400 V, V GE = 15 V

IC = 20 A, R G =10 Ω

E OFF

AM10157V1

0

500

1000

1500

2000

0

60

120

180

240

R g (Ω)

E (µJ)

E OFF

V CE = 400 V, V GE = 15 V

IC = 20 A, T J = 125 °C

AM10158V1

0

200

400

600

800

1000

10

15

20

25

30

35

40

IC (A)

E (µJ)

V CE = 400 V, V GE = 15 V

R G = 10 Ω, T J = 125 °C

E OFF

AM10159V1

AM10156V1

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