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STGFW20H65FB Fiches technique(PDF) 4 Page - STMicroelectronics |
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STGFW20H65FB Fiches technique(HTML) 4 Page - STMicroelectronics |
4 / 20 page Electrical characteristics STGFW20H65FB, STGW20H65FB, STGWT20H65FB 4/20 DocID026826 Rev 1 2 Electrical characteristics TJ = 25 °C unless otherwise specified. Table 4. Static characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)CES Collector-emitter breakdown voltage (VGE = 0) IC = 2 mA 650 V VCE(sat) Collector-emitter saturation voltage VGE = 15 V, IC = 20 A 1.55 2 V VGE = 15 V, IC = 20 A TJ = 125 °C 1.65 VGE = 15 V, IC = 20 A TJ = 175 °C 1.75 VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 V ICES Collector cut-off current (VGE = 0) VCE = 650 V 25 µA IGES Gate-emitter leakage current (VCE = 0) VGE = ± 20 V 250 nA Table 5. Dynamic characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Cies Input capacitance VCE = 25 V, f = 1 MHz, VGE = 0 -2764 - pF Coes Output capacitance - 80 - pF Cres Reverse transfer capacitance -60 - pF Qg Total gate charge VCC = 520 V, IC = 20 A, VGE = 15 V, see Figure 27 -120 - nC Qge Gate-emitter charge - 20 - nC Qgc Gate-collector charge - 50 - nC |
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