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STGP30V60DF Fiches technique(PDF) 1 Page - STMicroelectronics

No de pièce STGP30V60DF
Description  Low thermal resistance
Download  22 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGP30V60DF Fiches technique(HTML) 1 Page - STMicroelectronics

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This is information on a product in full production.
October 2013
DocID024361 Rev 4
1/22
22
STGB30V60DF, STGP30V60DF,
STGW30V60DF, STGWT30V60DF
Trench gate field-stop IGBT, V series
600 V, 30 A very high speed
Datasheet - production data
Figure 1. Internal schematic diagram
Features
• Maximum junction temperature: T
J
= 175 °C
• Tail-less switching off
• V
CE(sat)
= 1.85 V (typ.) @ I
C
= 30 A
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• Very fast soft recovery antiparallel diode
Applications
• Photovoltaic inverters
• Uninterruptible power supply
• Welding
• Power factor correction
• Very high frequency converters
Description
This device is an IGBT developed using an
advanced proprietary trench gate field stop
structure. The device is part of the V series of
IGBTs, which represent an optimum compromise
between conduction and switching losses to
maximize the efficiency of very high frequency
converters. Furthermore, a positive V
CE(sat)
temperature coefficient and very tight parameter
distribution result in safer paralleling operation.
C (2, TAB)
G (1)
E (3)
TO-247
TO-3P
1
2
3
1
2
3
1
3
TAB
D²PAK
1
2
3
TAB
TO-220
TAB
Table 1. Device summary
Order codes
Marking
Package
Packaging
STGB30V60DF
GB30V60DF
D²PAK
Tape and reel
STGP30V60DF
GP30V60DF
TO-220
Tube
STGW30V60DF
GW30V60DF
TO-247
Tube
STGWT30V60DF
GWT30V60DF
TO-3P
Tube
www.st.com


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