STGB30V60F datasheet(4/19 Pages) STMICROELECTRONICS

No de pièce	STGB30V60F

Description	Low thermal resistance

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Fabricant	STMICROELECTRONICS [STMicroelectronics]

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Electrical characteristics

STGB30V60F, STGP30V60F

4/19

DocID025049 Rev 4

2

Electrical characteristics

TJ = 25 °C unless otherwise specified.

Table 4. Static characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter

breakdown voltage

(VGE = 0)

IC = 2 mA

600

V

VCE(sat)

Collector-emitter saturation

voltage

VGE = 15 V, IC = 30 A

1.85

2.3

V

VGE = 15 V, IC = 30 A

TJ = 125 °C

2.15

VGE = 15 V, IC = 30 A

TJ = 175 °C

2.35

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 1 mA

5

6

7

V

ICES

Collector cut-off current

(VGE = 0)

VCE = 600 V

25

µA

IGES

Gate-emitter leakage

current (VCE = 0)

VGE = ± 20 V

250

nA

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