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STGB30H60DLFB Fiches technique(PDF) 8 Page - STMicroelectronics

No de pièce STGB30H60DLFB
Description  Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGB30H60DLFB Fiches technique(HTML) 8 Page - STMicroelectronics

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Electrical characteristics
STGB30H60DLFB, STGW30H60DLFB
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DocID026409 Rev 2
Figure 14. Capacitance variation
Figure 15. Gate charge vs. gate-emitter voltage
C(pF)
1000
100
10
0.1
VCE(V)
110
Cies
Coes
Cres
100
GIPG280120141707FSR
VGE
(V)
4
2
0
0
Qg(nC)
40
80
120
160
6
8
10
12
14
VCC= 520V, IC= 30A
IG= 1mA
16
GIPG280120141455FSR
Figure 16. Switching loss vs collector current
Figure 17. Switching loss vs gate resistance
E (μJ)
400
200
0
0
IC(A)
20
40
60
600
VCC= 400V, VGE= 15V
Rg= 10Ω, TJ= 175°C
EOFF
1000
800
1200
GIPG280120141606FSR
E (μJ)
700
500
0
RG(Ω)
10
20
30
800
VCC= 400V, VGE= 15V
IC= 30A, TJ= 175 °C
40
EOFF
600
900
1000
GIPG280120141536FSR
Figure 18. Switching loss vs temperature
Figure 19. Switching loss vs collector-emitter
voltage
E (μJ)
400
200
0
20
TJ(°C)
40
60
80
100
600
VCC= 400V, VGE= 15V
Rg= 10Ω, IC= 30A
120
EOFF
140
160
GIPG280120141532FSR
E (μJ)
400
200
0
150
VCE(V)
250
350
450
600
TJ= 175°C, VGE= 15V
Rg= 10Ω, IC= 30A
EOFF
800
GIPG280120141610FSR


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