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STGP20V60F Fiches technique(PDF) 5 Page - STMicroelectronics

No de pièce STGP20V60F
Description  600 V, 20 A very high speed trench gate field-stop IGBT
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGP20V60F Fiches technique(HTML) 5 Page - STMicroelectronics

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DocID024890 Rev 1
5/18
STGB20V60F, STGP20V60F
Electrical characteristics
Table 6. Switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on delay time
V
CE
= 400 V, I
C
= 20 A,
V
GE
= 15 V
, di/dt = 100 A/
μs
see Figure 21
-38
-
ns
t
r
Current rise time
-
10
-
ns
(di/dt)
on
Turn-on current slope
-
1556
-
A/μs
t
d(off)
Turn-off delay time
-
149
-
ns
t
f
Current fall time
-
15
-
ns
E
on
(1)
1.
Energy losses include reverse recovery of the external diode. The diode is the same of the copacked
STGW20V60DF
Turn-on switching losses
-
200
-
μJ
E
off
(2)
2.
Turn-off losses include also the tail of the collector current.
Turn-off switching losses
-
130
-
μJ
E
ts
Total switching losses
-
330
-
μJ
t
d(on)
Turn-on delay time
V
CE
= 400 V, I
C
= 20 A,
di/dt = 100 A/μs,
V
GE
= 15 V
,
T
J
= 175 °C, see
Figure 21
-37
-
ns
t
r
Current rise time
-
12
-
ns
(di/dt)
on
Turn-on current slope
-
1340
-
A/μs
t
d(off)
Turn-off delay time
-
150
-
ns
t
f
Current fall time
-
23
-
ns
E
on
(1)
Turn-on switching losses
-
430
-
μJ
E
off
(2)
Turn-off switching losses
-
210
-
μJ
E
ts
Total switching losses
-
640
-
μJ


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