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STGB3NC120HD Fiches technique(PDF) 5 Page - STMicroelectronics |
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STGB3NC120HD Fiches technique(HTML) 5 Page - STMicroelectronics |
5 / 16 page STGB3NC120HD, STGF3NC120HD, STGP3NC120HD Electrical characteristics Doc ID 11089 Rev 4 5/16 Table 6. Switching on/off (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr (di/dt)on Turn-on delay time Current rise time Turn-on current slope VCC = 800 V, IC = 3 A RG= 10 Ω, VGE= 15 V, (see Figure 20) - 15 3.5 880 - ns ns A/µs td(on) tr (di/dt)on Turn-on delay time Current rise time Turn-on current slope VCC = 800 V, IC = 3 A RG= 10 Ω, VGE= 15 V, TJ= 125 °C (see Figure 20) - 14.5 4 770 - ns ns A/µs tr(Voff) td(off) tf Off voltage rise time Turn-off delay time Current fall time VCC = 800 V, IC = 3 A RG= 10 Ω, VGE= 15 V, (see Figure 20) - 72 118 250 - ns ns ns tr(Voff) td(off) tf Off voltage rise time Turn-off delay time Current fall time VCC = 800 V, IC = 3 A RG= 10 Ω, VGE= 15 V, TJ= 125 °C (see Figure 20) - 132 210 470 - ns ns ns Table 7. Switching energy (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit Eon (1) Eoff (2) Ets 1. Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25 °C and 125 °C) 2. Turn-off losses include also the tail of the collector current Turn-on switching losses Turn-off switching losses Total switching losses VCC = 800 V, IC = 3 A RG= 10 Ω, VGE= 15 V, (see Figure 20) - 236 290 526 - µJ µJ µJ Eon (1) Eoff (2) Ets Turn-on switching losses Turn-off switching losses Total switching losses VCC = 800 V, IC = 3 A RG= 10 Ω, VGE= 15 V, TJ= 125 °C (see Figure 20) - 360 620 980 - µJ µJ µJ Table 8. Collector-emitter diode Symbol Parameter Test conditions Min. Typ. Max. Unit VF Forward on-voltage IF = 1.5 A IF = 1.5 A, TJ = 125 °C - 1.6 1.3 2.0 V V trr Qrr Irrm Reverse recovery time Reverse recovery charge Reverse recovery current IF = 3 A, VR = 40 V, di/dt = 100 A/µs (see Figure 23) - 51 85 3.3 ns nC A trr Qrr Irrm Reverse recovery time Reverse recovery charge Reverse recovery current IF = 3 A, VR = 40 V, TJ = 125 °C, di/dt = 100 A/µs (see Figure 23) - 64 133 4.2 ns nC A |
Numéro de pièce similaire - STGB3NC120HD |
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Description similaire - STGB3NC120HD |
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