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2SD1047 Datasheet(Fiches technique) 3 Page - STMicroelectronics

Numéro de pièce 2SD1047
Description  Power supply
Télécharger  10 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

2SD1047 Datasheet(HTML) 3 Page - STMicroelectronics

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2SD1047
Electrical characteristics
Doc ID 018729 Rev 1
3/10
2
Electrical characteristics
(Tcase = 25 °C; unless otherwise specified)
Table 4.
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICBO
Collector cut-off current
(IE = 0)
VCB = 200 V
0.1
µA
IEBO
Emitter cut-off current
(IC = 0)
VEB = 6 V
0.1
µA
V(BR)CEO
(1)
Collector-emitter
breakdown voltage (IB = 0)
IC = 50 mA
140
V
V(BR)CBO
Collector-base breakdown
voltage (IE = 0)
IC = 100 µA
200
V
V(BR)EBO
(1)
Emitter-base breakdown
voltage (IC = 0)
IE = 1 mA
6
V
VCE(sat)
(1)
Collector-emitter
saturation voltage
IC = 5 A
IB = 500 mA
IC = 7 A
IB = 700 mA
0.5
0.7
V
V
VBE
Base-emitter voltage
VCE = 5 V
IC = 5 A
1.3
V
hFE
DC current gain
IC = 1 A
VCE = 5 V
IC = 5 A
VCE = 4 V
60
50
200
fT
Transition frequency
IC = 0.5 A
VCE = 12 V
20
MHz
CCBO
Collector-base
capacitance (IE = 0)
VCB = 10 V
f = 1 MHz
150
pF
ton
tstg
tf
Resistive Load
Turn-on time
Storage time
Fall time
VCC = 60 V
IC = 5 A
IB1 = -IB2 = 0.5 A
0.22
4.3
0.5
µs
µs
µs
1.
Pulse duration = 300 µs, duty cycle
≤ 1.5 %


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