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SI6924EDQ Fiches technique(PDF) 3 Page - Vishay Siliconix |
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SI6924EDQ Fiches technique(HTML) 3 Page - Vishay Siliconix |
3 / 5 page Si6924EDQ Vishay Siliconix Document Number: 70814 S-59522—Rev. C, 30-Nov-98 www.vishay.com 3 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 0.5 V VDS = 0 V, VGS = "4.5 V "1 mA Gate-Body Leakage IGSS VDS = 0 V, VGS = "14 V "10 mA VDS = 22.4 V, VGS = 0 V 1 m Zero Gate Voltage Drain Current IDSS VDS = 22.4 V, VGS = 0 V, TJ = 55_C 5 mA On-State Drain Currentb ID(on) VDS w 5 V, VGS = 5 V 10 A VGS = 4.5 V, ID = 4.6 A 0.026 0.033 Drain-Source On-State Resistanceb rDS(on) VGS = 3.0 V, ID = 4.3 A 0.029 0.038 W DS(on) VGS = 2.5 V, ID = 4.1 A 0.031 0.042 Forward Transconductanceb gfs VDS = 10 V, ID = 4.6 A 18 S Diode Forward Voltageb VSD IS = 1.25 A, VGS = 0 V 0.7 1.1 V Dynamica Total Gate Charge Qg 14 20 Gate-Source Charge Qgs VDS = 10 V, VGS = 4.5 V, ID = 4.6 A 2.1 nC Gate-Drain Charge Qgd 4.2 Turn-On Delay Time td(on) 0.55 1.0 Rise Time tr VDD = 10 V, RL = 10 W 2.0 4.0 m Turn-Off Delay Time td(off) VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W 7.0 12 ms Fall Time tf 4.5 8 Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 14 0.001 100 10,000 04 TJ = 25_C Gate Current vs. Gate-Source Voltage 0 4 8 12 16 Gate-Current vs. Gate-Source Voltage VGS - Gate-to-Source Voltage (V) 0.01 0.1 1 10 1,000 VGS - Gate-to-Source Voltage (V) TJ = 150_C 26 8 10 12 8 6 4 2 0 |
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