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SI4460-C2A-GM Fiches technique(PDF) 10 Page - Silicon Laboratories |
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SI4460-C2A-GM Fiches technique(HTML) 10 Page - Silicon Laboratories |
10 / 53 page Si4463/61/60-C 10 Rev 1.0 Output Power Variation (Si4463) At 20 dBm PA power setting, 915 MHz, Class E match, 3.3 V, 25 °C 19 20 21 dBm Output Power Variation (Si4460) At 10 dBm PA power setting, 915 MHz, Class E match, 3.3 V, 25 °C 910 11 dBm Output Power Variation (Si4463) At 20 dBm PA power setting, 169 MHz, Square Wave match, 3.3 V, 25 °C 18.5 20 21 dBm Output Power Variation (Si4460) At 10 dBm PA power setting, 169 MHz, Square Wave match, 3.3 V, 25 °C 9.5 10 10.5 dBm TX RF Output Steps PRF_OUT Using switched current match within 6 dB of max power using CLE match within 6 dB of max power — 0.25 0.4 dB TX RF Output Level Variation vs. Temperature PRF_TEMP –40 to +85 C— 2.3 3 dB TX RF Output Level Variation vs. Frequency PRF_FREQ Measured across 902–928 MHz — 0.6 1.7 dB Transmit Modulation Filtering BT Gaussian Filtering Bandwith Time Product —0.5 — Table 4. Transmitter AC Electrical Characteristics (Continued) Parameter Symbol Test Condition Min Typ Max Unit Notes: 1. All minimum and maximum values are guaranteed across the recommended operating conditions of supply voltage and from –40 to +85 °C unless otherwise stated. All typical values apply at VDD = 3.3 V and 25 °C unless otherwise stated. 2. The maximum data rate is dependent on the XTAL frequency and is calculated as per the formula: Maximum Symbol Rate = Fxtal/60, where Fxtal is the XTAL frequency (typically 30 MHz). 3. Default API setting for modulation deviation resolution is double the typical value specified. 4. Output power is dependent on matching components and board layout. |
Numéro de pièce similaire - SI4460-C2A-GM |
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Description similaire - SI4460-C2A-GM |
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