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SI4340DY Fiches technique(PDF) 1 Page - Vishay Siliconix |
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SI4340DY Fiches technique(HTML) 1 Page - Vishay Siliconix |
1 / 9 page FEATURES D TrenchFETr Power MOSFET D 100% Rg Tested APPLICATIONS D DC/DC Converters - Game Stations - Notebook PC Logic Si4340DY Vishay Siliconix New Product Document Number: 72376 S-31857—Rev. A, 15-Sep-03 www.vishay.com 1 Dual N-Channel 20-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) Channel 1 0.012 @ VGS = 10 V 9.6 Channel-1 20 0.0175 @ VGS = 4.5 V 7.8 Channel 2 20 0.010 @ VGS = 10 V 13.5 Channel-2 0.0115 @ VGS = 4.5 V 12.8 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 20 0.53 V @ 3 A 2.0 D1 S1 D1 S1 G1 D2 G2 D2 SO-14 11 12 13 14 Top View 2 3 4 1 G2 S2 G1 S1 D1 D2 N-Channel 2 MOSFET N-Channel 1 MOSFET Schottky Diode S2 D2 S2 D2 S2 D2 8 9 10 5 6 7 Ordering Information: Si4340DY Si4340DY-T1 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Channel-1 Channel-2 Parameter Symbol 10 secs Steady State 10 secs Steady State Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS "20 "16 V Continuous Drain Current (TJ = 150_C)a TA = 25_C ID 9.6 7.3 13.5 9.5 Continuous Drain Current (TJ = 150_C)a TA = 70_C ID 7.7 5.8 10.8 7.5 A Pulsed Drain Current IDM 40 50 A Continuous Source Current (Diode Conduction)a IS 1.8 1.04 2.73 1.30 Maximum Power Dissipationa TA = 25_C PD 2.0 1.14 3.0 1.43 W Maximum Power Dissipationa TA = 70_C PD 1.28 0.73 1.9 0.91 W Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 _C THERMAL RESISTANCE RATINGS Channel-1 Channel-2 Schottky Parameter Symbol Typ Max Typ Max Typ Max Unit Mi J ti t A bi ta t v 10 sec R 53 62.5 35 42 40 48 Maximum Junction-to-Ambienta Steady-State RthJA 92 110 72 87 76 93 _C/W Maximum Junction-to-Foot (Drain) Steady-State RthJF 35 42 18 23 21 25 C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. |
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