STFW45N65M5 datasheet(5/18 Pages) STMICROELECTRONICS

No de pièce	STFW45N65M5

Description	N-channel 650 V, 35 A, 0.067 廓 typ., MDmesh??V Power MOSFETs in TO-3PF, TO-247 and TO-247 long leads packages

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Fabricant	STMICROELECTRONICS [STMicroelectronics]

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STFW45N65M5, STW45N65M5, STWA45N65M5

Electrical characteristics

18

Table 7. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

t

d

(v)

Voltage delay time

V

DD

= 400 V, I

D

= 23 A,

R

G

= 4.7

Ω, V

GS

= 10 V

(see

Figure 19 and

Figure 22)

-79.5

-

ns

t

r

(v)

Voltage rise time

-

11

-

ns

t

f

(i)

Current fall time

-

9.3

-

ns

t

c

(off)

Crossing time

-

16

-

ns

Table 8. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

I

SD

Source-drain current

-

35

A

I

SDM

(1)

1.

Pulse width limited by safe operating area.

Source-drain current (pulsed)

-

140

A

V

SD

(2)

2.

Pulsed: pulse duration = 300 μs, duty cycle 1.5%

Forward on voltage

I

SD

= 35 A, V

GS

= 0

-

1.5

V

t

rr

Reverse recovery time

I

SD

= 35 A, di/dt = 100 A/μs

V

DD

= 100 V (see

Figure 19)

-

392

ns

Q

rr

Reverse recovery charge

-

7.4

μC

I

RRM

Reverse recovery current

-

38

A

t

rr

Reverse recovery time

I

SD

= 35 A, di/dt = 100 A/μs

V

DD

= 100 V, T

j

= 150 °C

(see

Figure 19)

-

468

ns

Q

rr

Reverse recovery charge

-

9.7

μC

I

RRM

Reverse recovery current

-

42

A

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