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STFW3N170 Fiches technique(PDF) 5 Page - STMicroelectronics |
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STFW3N170 Fiches technique(HTML) 5 Page - STMicroelectronics |
5 / 12 page STFW3N170 Electrical characteristics DocID023985 Rev 3 5/12 Table 7: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current Tj = 25 °C - 2.6 A ISDM Source-drain current (pulsed) - 10.4 VSD(1) Forward on voltage VGS = 0 V, ISD = 2.6 A - 1.5 V trr Reverse recovery time ISD = 2.6 A, di/dt = 100 A/µs, VDD = 60 V (see Figure 16: "Test circuit for inductive load switching and diode recovery times") - 1.58 µs Qrr Reverse recovery charge - 6 µC IRRM Reverse recovery current - 7.9 A trr Reverse recovery time ISD = 2.6 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see Figure 16: "Test circuit for inductive load switching and diode recovery times") - 2.12 µs Qrr Reverse recovery charge - 8.8 µC IRRM Reverse recovery current - 8.3 A Notes: (1) Pulse test: pulse duration = 300 µs, duty cycle 1.5%. |
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