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SI2341DS Fiches technique(PDF) 2 Page - Vishay Siliconix |
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SI2341DS Fiches technique(HTML) 2 Page - Vishay Siliconix |
2 / 5 page Si2341DS Vishay Siliconix New Product www.vishay.com 2 Document Number: 72263 S-31675—Rev. B, 11-Aug-03 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Symbol Test Conditions Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = - 10 mA -30 V Gate-Threshold Voltage VGS(th) VDS = VGS, ID = - 250 mA - 1.0 - 3.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA Zero Gate Voltage Drain Current IDSS VDS = - 24 V, VGS = 0 V -1 mA Zero Gate Voltage Drain Current IDSS VDS = - 24 V, VGS = 0 V, TJ = 55_C -10 mA On-State Drain Currenta ID(on) VDS v -5 V, VGS = - 10 V -6 A Drain Source On Resistancea rDS( ) VGS = - 10 V, ID = - 2.8 A 0.057 0.072 W Drain-Source On-Resistancea rDS(on) VGS = - 4.5 V, ID = - 2.0 A 0.090 0.120 W Forward Transconductancea gfs VDS = - 5 V, ID = - 2.8 A 8.0 S Diode Forward Voltage VSD IS = - 0.75 A, VGS = 0 V - 0.8 - 1.2 V Dynamicb Total Gate Charge Qg 9.5 15 Gate-Source Charge Qgs VDS = - 15 V, VGS = - 10 V ID ^ - 2.8 A 1.5 nC Gate-Drain Charge Qgd ID ^ -2.8 A 2.5 Input Capacitance Ciss 400 Output Capacitance Coss VDS = - 15 V, VGS = 0, f = 1 MHz 95 pF Reverse Transfer Capacitance Crss 70 Switchingc Turn On Time td(on) 7 15 Turn-On Time tr VDD = - 15 V, RL =15 W ID ^ - 10 A VGEN = - 45 V 15 25 ns Turn-Off Time td(off) ID ^ - 1.0 A, VGEN = - 4.5 V RG = 6 W 20 30 ns Turn-Off Time tf 20 30 Notes a. Pulse test: PW v300 ms duty cycle v2%. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. S FaxBack 408-970-5600 |
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