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STF140N8F7 Fiches technique(PDF) 4 Page - STMicroelectronics

No de pièce STF140N8F7
Description  High avalanche ruggedness
Download  12 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STF140N8F7 Fiches technique(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STF140N8F7
4/12
DocID023888 Rev 3
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4: On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown voltage
VGS = 0, ID = 250 µA
80
V
IDSS
Zero gate voltage
Drain current
VGS = 0, VDS = 80 V
1
µA
VGS = 0, VDS = 80 V,
TJ=125 °C
10
µA
IGSS
Gate-source leakage
current
VDS = 0, VGS = ±20 V
±100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
2.5
4.5
V
RDS(on)
Static drain-source on-resistance
VGS = 10 V, ID = 32 A
3.5
4.3
Table 5: Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VGS = 0, VDS = 40 V,
f = 1 MHz
-
6340
-
pF
Coss
Output capacitance
-
1195
-
pF
Crss
Reverse transfer capacitance
-
105
-
pF
Qg
Total gate charge
VDD = 40 V, ID = 64 A,
VGS = 10 V
-
96
-
nC
Qgs
Gate-source charge
-
30
-
nC
Qgd
Gate-drain charge
-
26
-
nC
Table 6: Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VDD = 40 V, ID = 45 A RG =
4.7 Ω,
VGS = 10 V
-
26
-
ns
tr
Rise time
-
51
-
ns
td(off)
Turn-off-delay time
-
82
-
ns
tf
Fall time
-
44
-
ns
Table 7: Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
64
A
ISDM(1)
Source-drain current (pulsed)
-
256
A
VSD (2)
Forward on voltage
VGS = 0, ISD = 64 A
-
1.2
V
trr
Reverse recovery time
ISD = 64 A, di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C
-
58
ns
Qrr
Reverse recovery charge
-
92
nC
IRRM
Reverse recovery current
-
3.2
A
Notes:
(1)Pulse width is limited by safe operating area
(2)Pulse test: pulse duration = 300 µs, duty cycle 1.5%


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