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STF140N8F7 Fiches technique(PDF) 4 Page - STMicroelectronics |
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STF140N8F7 Fiches technique(HTML) 4 Page - STMicroelectronics |
4 / 12 page Electrical characteristics STF140N8F7 4/12 DocID023888 Rev 3 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4: On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS = 0, ID = 250 µA 80 V IDSS Zero gate voltage Drain current VGS = 0, VDS = 80 V 1 µA VGS = 0, VDS = 80 V, TJ=125 °C 10 µA IGSS Gate-source leakage current VDS = 0, VGS = ±20 V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2.5 4.5 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 32 A 3.5 4.3 mΩ Table 5: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VGS = 0, VDS = 40 V, f = 1 MHz - 6340 - pF Coss Output capacitance - 1195 - pF Crss Reverse transfer capacitance - 105 - pF Qg Total gate charge VDD = 40 V, ID = 64 A, VGS = 10 V - 96 - nC Qgs Gate-source charge - 30 - nC Qgd Gate-drain charge - 26 - nC Table 6: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 40 V, ID = 45 A RG = 4.7 Ω, VGS = 10 V - 26 - ns tr Rise time - 51 - ns td(off) Turn-off-delay time - 82 - ns tf Fall time - 44 - ns Table 7: Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 64 A ISDM(1) Source-drain current (pulsed) - 256 A VSD (2) Forward on voltage VGS = 0, ISD = 64 A - 1.2 V trr Reverse recovery time ISD = 64 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C - 58 ns Qrr Reverse recovery charge - 92 nC IRRM Reverse recovery current - 3.2 A Notes: (1)Pulse width is limited by safe operating area (2)Pulse test: pulse duration = 300 µs, duty cycle 1.5% |
Numéro de pièce similaire - STF140N8F7 |
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Description similaire - STF140N8F7 |
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