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STD8NF25 Fiches technique(PDF) 3 Page - STMicroelectronics |
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STD8NF25 Fiches technique(HTML) 3 Page - STMicroelectronics |
3 / 14 page STD8NF25 Electrical ratings Doc ID 018593 Rev 1 3/14 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 250 V VGS Gate-source voltage ±20 V ID (1) 1. The value is rated according to Rthj-c. Drain current (continuous) at TC = 25 °C 8 A Drain current (continuous) at TC=100 °C 6 A IDM (2) 2. Pulse is rated according to SOA. Drain current (pulsed) 32 A PTOT Total dissipation at TC = 25 °C 72 W TJ Tstg Operating junction temperature Storage temperature -55 to 175 °C Table 3. Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 2.08 °C/W Rthj-pcb (1) 1. When mounted on 1inch² FR-4, 2 Oz copper board. Thermal resistance junction-pcb 50 Table 4. Avalanche data Symbol Parameter Value Unit IAV Non-repetitive avalanche current 8 A EAS Single pulse avalanche energy (starting TJ=25 °C, ID=IAV, VDD=50 V) 110 mJ |
Numéro de pièce similaire - STD8NF25 |
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Description similaire - STD8NF25 |
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