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STD6N52K3 Fiches technique(PDF) 4 Page - STMicroelectronics

No de pièce STD6N52K3
Description  Extremely high dv/dt capability
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD6N52K3 Fiches technique(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STB6N52K3, STD6N52K3, STF6N52K3, STP6N52K3
4/22
Doc ID 14994 Rev 2
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4.
On /off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
525
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = Max rating
VDS = Max rating, TC=125 °C
1
50
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V
± 10
µA
VGS(th)
Gate threshold voltage VDS = VGS, ID = 50 µA
3
3.75
4.5
V
RDS(on
Static drain-source on
resistance
VGS = 10 V, ID = 2.5 A
1
1.2
Ω
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz, VGS = 0
-
670
54
10
-
pF
pF
pF
Coss eq
(1)
1.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Equivalent output
capacitance
VGS = 0, VDS = 0 to 240 V
-
TBD
-
pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
4
-
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 420 V, ID = 5 A,
VGS = 10 V
(see Figure 20)
-
26
4
15
-
nC
nC
nC
Table 6.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
VDD = 260 V, ID = 2.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 19)
-
10
11
31
18
-
ns
ns
ns
ns


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