BTA06T-600CWRG datasheet(2/8 Pages) STMICROELECTRONICS

No de pièce	BTA06T-600CWRG

Description	6 A Snubberless??Triac

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Characteristics

BTA06T-600CWRG

2/8

Doc ID 17641 Rev 2

1

Characteristics

Table 1.

Absolute maximum ratings (limiting values)

Symbol

Parameter

Value

Unit

IT(RMS)

On-state rms current (full sine wave)

Tc = 100 °C

6

A

ITSM

Non repetitive surge peak on-state current (full

cycle sine wave, Tj initial = 25 °C)

F = 60 Hz

t = 16.7 ms

47

A

F = 50 Hz

t = 20 ms

45

I²tI²t Value for fusing

tp = 10 ms

13

A²s

dI/dt

Critical rate of rise of on-state current

IG = 2 x IGT, tr ≤ 100 ns

F = 120 Hz

Tj = 125 °C

50

A/µs

VDSM/VRSM Non repetitive surge peak off-state voiltage

tp = 10 ms

Tj = 25 °C

VDRM/VRRM

+ 100

V

IGM

Peak gate current

tp = 20 µs

Tj = 125 °C

4

A

PG(AV)

Average gate power dissipation

Tj = 125 °C

1

W

Tstg

Tj

Storage junction temperature range

Operating junction temperature range

-40 to +150

-40 to +125

°C

Table 2.

Electrical characteristics, Snubberless (3 quadrants)

(Tj = 25 °C, unless otherwise specified)

Symbol

Test conditions

Quadrant

Value

Unit

IGT

(1)

VD = 12 V RL = 30 Ω

I - II - III

MAX

35

mA

VGT

VD = 12 V RL = 30 Ω

I - II - III

MAX

1.3

V

VGD

VD = VDRM RL = 3.3 kΩ

I - II - III

MIN

0.2

V

IH

(2)

IT = 100 mA

MAX

35

mA

IL

IG = 1.2 x IGT

I - III

MAX

50

mA

II

80

dV/dt (2)

VD = 67% VDRM, gate open, Tj = 125 °C

MIN

750

V/µs

(dI/dt)c (2)

Without snubber, Tj = 125 °C

MIN

8.0

A/ms

1.

Minimum IGT is guaranteed at 5% of IGT max.

2.

For both polarities of A2 pin referenced to A1 pin

Table 3.

Static electrical characteristics

Symbol

Test conditions

Value

Unit

VTM

(1)

ITM = 8.5 A, tp = 380 µs

Tj = 25 °C

MAX

1.6

V

VTO

(1)

Threshold voltage

Tj = 125 °C

MAX

0.85

V

RD

(1)

Dynamic resistance

Tj = 125 °C

MAX

80

m

Ω

IDRM

IRRM

VDRM = VRRM

Tj = 25 °C

MAX

5µA

Tj = 125 °C

1

mA

1.

For both polarities of A2 pin referenced to A1 pin

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