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2SC2715 Fiches technique(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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2SC2715 Fiches technique(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
1 / 3 page Production specification Silicon Epitaxial Planar Transistor 2SC2715 C099 www.gmicroelec.com Rev.A 1 FEATURES High power gain Recommended for FM IF,OSC stage and AM CONV.IF stage APPLICATIONS High Frequency Amplifier Applications SOT-23 ORDERING INFORMATION Type No. Marking Package Code 2SC2715 RR1/RO1/RY1 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 4 V IC Collector Current -Continuous 50 mA IB Base current 10 mA PC Collector Dissipation 150 mW Tj,Tstg Junction and Storage Temperature -55 to +125 ℃ Pb Lead-free |
Numéro de pièce similaire - 2SC2715_13 |
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Description similaire - 2SC2715_13 |
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