2SC945 datasheet(2/4 Pages) BILIN

No de pièce	2SC945

Description	Silicon Epitaxial Planar Transistor

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Fabricant	BILIN [Galaxy Semi-Conductor Holdings Limited]

Site Internet	http://www.galaxycn.com

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Production specification

Silicon Epitaxial Planar Transistor

2SC945

C017

www.gmicroelec.com

Rev.A

2

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Test conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=0.1mA,IE=0

60

V

Collector-emitter breakdown voltage V(BR)CEO

IC=1mA,IB=0

50

V

Emitter-base breakdown voltage

V(BR)EBO

IE=0.1mA,IC=0

5

V

Collector cut-off current

ICBO

VCB=60V,IE=0

0.1

μA

Collector cut-off current

ICEO

VCE=50V,IB=0

0.1

μA

Emitter cut-off current

IEBO

VEB=5V,IC=0

0.1

μA

DC current gain

hFE

VCE=6V,IC=1mA

VCE=6V,IC=0.1mA

130

40

400

Collector-emitter saturation voltage

VCE(sat)

IC=100mA, IB=10mA

0.15

0.3

V

Base-emitter saturation voltage

VBE(sat)

IC=100mA, IB=10mA

0.86

1

V

Base to Emitter Voltage

VBE

VCE=6V, IC=1.0mA

0.55

0.62

0.65

V

Transition frequency

fT

VCE=6V, IC=10mA

f=30MHz

150

MHz

Collector output capacitance

Cob

VCB=10V,IE=0,f=1MHz

3.0

4.0

pF

Noise figure

NF

VCE=6V, IC=0.1mA

f=1kMHz,Rg=10kΩ

4

10

dB

CLASSIFICATION OF hFE(1)

Rank

L

H

Range

130-200

200-400

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