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STFI13N65M2 Fiches technique(PDF) 3 Page - STMicroelectronics |
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STFI13N65M2 Fiches technique(HTML) 3 Page - STMicroelectronics |
3 / 15 page DocID026893 Rev 2 3/15 STF13N65M2,STFI13N65M2 Electrical ratings 15 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VGS Gate-source voltage ± 25 V ID Drain current (continuous) at TC = 25 °C 10(1) 1. Limited by maximum junction temperature.. A ID Drain current (continuous) at TC = 100 °C 6.3(1) A IDM (2) 2. Pulse width limited by safe operating area. Drain current (pulsed) 40(1) A PTOT Total dissipation at TC = 25 °C 25 W VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC =25 °C) 2500 V dv/dt (3) 3. ISD ≤ 10 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD=400 V Peak diode recovery voltage slope 15 V/ns dv/dt(4) 4. VDS ≤ 520 V MOSFET dv/dt ruggedness 50 Tstg Storage temperature - 55 to 150 °C Tj Max. operating junction temperature 150 Table 3. Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 5 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W Table 4. Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) 1.8 A EAS Single pulse avalanche energy (starting Tj = 25°C, ID =IAR;VDD =50V) 350 mJ |
Numéro de pièce similaire - STFI13N65M2 |
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Description similaire - STFI13N65M2 |
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