DocID024664 Rev 4

5/15

STF6N80K5, STFI6N80K5

Electrical characteristics

15

The built-in back-to-back Zener diodes are specifically designed to enhance the ESD

performance of the device. The Zener voltage facilitates efficient and cost-effective device

integrity protection,thus eliminating the need for additional external componentry.

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Turn-on delay time

(see Figure 14: Switching

times test circuit for

resistive load and

Figure 19: Switching time

waveform)

-16

-

ns

Rise time

-

7.5

-

ns

Turn-off delay time

-

28.5

-

ns

Fall time

-

16

-

ns

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Source-drain current

-

4.5

A

(1)

1.

Pulse width limited by safe operating area

Source-drain current (pulsed)

-

18

A

(2)

2.

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

-

1.5

V

Reverse recovery time

di/dt = 100 A/µs,

(see Figure 16: Test

circuit for inductive load

switching and diode

recovery times)

-

280

ns

Reverse recovery charge

-

2.2

μC

Reverse recovery current

-

15.5

A

Reverse recovery time

di/dt = 100 A/µs,

Tj = 150 °C

(see Figure 16: Test

circuit for inductive load

switching and diode

recovery times)

-

450

ns

Reverse recovery charge

-

3.15

μC

Reverse recovery current

-

14

A

Table 8. Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

30

-

-

V