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STD105N10F7AG Fiches technique(PDF) 1 Page - STMicroelectronics |
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STD105N10F7AG Fiches technique(HTML) 1 Page - STMicroelectronics |
1 / 14 page June 2016 DocID027071 Rev 4 1/14 This is information on a product in full production. www.st.com STD105N10F7AG Automotive-grade N- channel 100 V, 6.8 mΩ typ., 80 A, STripFET™ F7 Power MOSFET in a DPAK package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID PTOT STD105N10F7AG 100 V 8 mΩ 80 A 120 W Designed for automotive applications and AEC-Q101 qualified Among the lowest RDS(on) on the market Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code Marking Package Packing STD105N10F7AG 105N10F7 DPAK Tape and reel AM01475v1_Tab D(2, TAB) G(1) S(3) |
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