STD7N90K5 datasheet(3/16 Pages) STMICROELECTRONICS

No de pièce	STD7N90K5

Description	Ultra-low gate charge

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STD7N90K5

Electrical ratings

DocID029862 Rev 1

3/16

1

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

± 30

V

ID

Drain current (continuous) at TC = 25 °C

7

A

ID

Drain current (continuous) at TC = 100 °C

4.4

A

ID(1)

Drain current (pulsed)

28

A

PTOT

Total dissipation at TC = 25 °C

90

W

dv/dt (2)

Peak diode recovery voltage slope

4.5

V/ns

dv/dt (3)

MOSFET dv/dt ruggedness

50

Tj

Operating junction temperature range

- 55 to 150

°C

Tstg

Storage temperature range

Notes:

(1)Pulse width limited by safe operating area

(2)ISD ≤ 7 A, di/dt ≤ 100 A/μs; VDS peak < V(BR)DSS, VDD = 450 V

(3)VDS ≤ 720 V

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

1.38

°C/W

Rthj-pcb(1)

Thermal resistance junction-ambient

50

°C/W

Notes:

(1)When mounted on 1 inch² FR-4 board, 2 oz Cu.

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive (pulse

width limited by Tjmax)

2.4

A

EAS

Single pulse avalanche energy (starting Tj = 25 °C,

ID = IAR, VDD = 50 V)

230

mJ

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