STD7N65M2 datasheet(3/17 Pages) STMICROELECTRONICS

No de pièce	STD7N65M2

Description	Extremely low gate charge

Download	17 Pages

Scroll/Zoom	100%

Fabricant	STMICROELECTRONICS [STMicroelectronics]

Site Internet	http://www.st.com

Logo

3 / 17 page

DocID026787 Rev 2

3/17

STD7N65M2

Electrical ratings

17

1

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

± 25

V

ID

Drain current (continuous) at TC = 25 °C

5

A

ID

Drain current (continuous) at TC = 100 °C

3.2

A

IDM

(1)

1.

Pulse width limited by safe operating area

Drain current (pulsed)

20

A

PTOT

Total dissipation at TC = 25 °C

60

W

dv/dt (2)

2.

ISD ≤ 5 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD=400 V

Peak diode recovery voltage slope

15

V/ns

dv/dt(3)

3.

VDS ≤ 520 V

MOSFET dv/dt ruggedness

50

Tstg

Storage temperature

- 55 to 150

°C

Tj

Operating junction temperature

Table 3. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case max

2.08

°C/W

Rthj-pcb

Thermal resistance junction-pcb max

50(1)

1.

When mounted on 1 inch² FR-4, 2 Oz copper board.

°C/W

Table 4. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive (pulse width

limited by Tjmax )

1A

EAS

Single pulse avalanche energy (starting Tj=25°C, ID= IAR;

VDD=50 V)

103

mJ

Numéro de pièce similaire - STD7N65M2

Fabricant	No de pièce	Fiches technique	Description
SHENZHEN DOINGTER SEMIC...	STD7N65M2	2Mb / 7P	N-Channel MOSFET uses advanced trench technology

More results

Description similaire - STD7N65M2

Fabricant	No de pièce	Fiches technique	Description
STMicroelectronics	STWA48N60M2	776Kb / 12P	Extremely low gate charge December 2015 Rev 1
	STL7N60M2	310Kb / 13P	Extremely low gate charge January 2015 Rev 1
	STD7N60M2	1Mb / 21P	Extremely low gate charge June 2013 Rev 1
	STB28N60M2	1Mb / 21P	Extremely low gate charge
	STD11N65M2	1Mb / 21P	Extremely low gate charge May 2014 Rev 1
	STF5N60M2	743Kb / 13P	Extremely low gate charge June 2016 Rev 2
	STF7N65M2	904Kb / 13P	Extremely low gate charge August 2014 Rev 2
	STL13N65M2	642Kb / 16P	Extremely low gate charge December 2014 Rev 1
	STL19N60M2	770Kb / 15P	Extremely low gate charge January 2016 Rev 1
	STW56N65M2	730Kb / 12P	Extremely low gate charge December 2014 Rev 1
	STB24N65M2	1Mb / 20P	Extremely low gate charge

More results

STD7N65M2 Fiches technique(PDF) 3 Page - STMicroelectronics

STD7N65M2 Fiches technique(HTML) 3 Page - STMicroelectronics

Numéro de pièce similaire - STD7N65M2

Description similaire - STD7N65M2

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17

Fiches technique Télécharger

Lien URL