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STD2N105K5 Fiches technique(PDF) 5 Page - STMicroelectronics |
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STD2N105K5 Fiches technique(HTML) 5 Page - STMicroelectronics |
5 / 21 page DocID026321 Rev 3 5/21 STD2N105K5, STP2N105K5, STU2N105K5 Electrical characteristics 21 The built-in back-to-back Zener diodes have specifically been designed to enhance the device's ESD capability. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components. Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max Unit td(on) Turn-on delay time VDD = 525 V, ID = 0.75 A, RG = 4.7 Ω, VGS = 10 V (see Figure 17) - 14.5 - ns tr Rise time - 8.5 - ns td(off) Turn-off-delay time - 35 - ns tf Fall time - 38.5 - ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max Unit ISD Source-drain current - 1.5 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) - 6 A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 1.5 A, VGS = 0 - 1.5 V trr Reverse recovery time ISD = 1.5 A, di/dt = 100 A/µs VDD= 60 V (see Figure 19) - 326 ns Qrr Reverse recovery charge - 1.19 µC IRRM Reverse recovery current - 7.3 A trr Reverse recovery time ISD = 1.5 A, di/dt = 100 A/µs VDD= 60 V TJ = 150 °C (see Figure 19) - 525 ns Qrr Reverse recovery charge - 1.83 µC IRRM Reverse recovery current - 7 A Table 8. Gate-source Zener diode Symbol Parameter Test conditions Min Typ. Max. Unit V(BR)GSO Gate-source breakdown voltage IGS = ± 1mA, ID=0 30 - - V |
Numéro de pièce similaire - STD2N105K5 |
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Description similaire - STD2N105K5 |
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