STB33N60M2 datasheet(6/15 Pages) STMICROELECTRONICS

No de pièce	STB33N60M2

Description	N-channel 600 V, 0.108 廓 typ., 26 A MDmesh II Plus??low Qg Power MOSFETs in a D2PAK package

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Electrical characteristics

STB33N60M2

6/15

DocID025253 Rev 2

2.1

Electrical characteristics (curves)

Figure 2. Safe operating area

Figure 3. Thermal impedance

Figure 4. Output characteristics

Figure 5. Transfer characteristics

Figure 6. Gate charge vs gate-source voltage

Figure 7. Static drain-source on-resistance

ID

10

1

0.1

1

100

VDS(V)

10

(A)

10µs

100µs

1ms

10ms

0.1

Tj=150°C

Tc=25°C

Single pulse

100

AM17906v1

ID

50

30

10

0

5

VDS(V)

10

(A)

15

4V

5V

VGS=7, 8, 9, 10V

20

40

60

6V

20

AM17907v1

ID

60

40

20

0

4

VGS(V)

8

(A)

2

6

10

30

50

VDS=17V

AM17908v1

VGS

6

4

2

0

20

Qg(nC)

(V)

8

30

40

10

VDD=480V

ID=26A

12

300

200

100

0

400

500

VDS

10

50

VDS

(V)

AM17909v1

RDS(on)

0.108

0.106

0.104

0

10

ID(A)

(

Ω)

5

15

0.110

VGS=10V

20

25

0.112

0.114

AM17910v1

Numéro de pièce similaire - STB33N60M2

Fabricant	No de pièce	Fiches technique	Description
STMicroelectronics	STB33N60DM2	1Mb / 20P	N-channel 600 V, 0.110 廓 typ., 24 A MDmesh??DM2 Power MOSFET in D짼PAK, TO-220 and TO-247 packages November 2015 Rev 2
Inchange Semiconductor ...	STB33N60DM2	336Kb / 2P	N-Channel MOSFET Transistor
STMicroelectronics	STB33N60DM6	424Kb / 14P	N-channel 600 V, 115 mΩ typ., 25 A, MDmesh DM6 Power MOSFET in a D2PAK package DS12904 - Rev 2 - July 2020

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Description similaire - STB33N60M2

Fabricant	No de pièce	Fiches technique	Description
STMicroelectronics	STB24N60M2	1Mb / 22P	N-channel 600 V, 0.168 typ., 18 A MDmesh II Plus low Qg Power MOSFET in D2PAK
	STB10N60M2	1Mb / 24P	N-channel 600 V, 0.550 typ., 7.5 A MDmesh II Plus low Qg Power MOSFETs in D짼PAK
	STW33N60M2	1Mb / 20P	N-channel 600 V, 0.108 typ., 26 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAK, TO-220 and TO-247 packages November 2013 Rev 2
	STL10N60M2	1Mb / 16P	N-channel 600 V, 0.580 廓 typ., 5.5 A MDmesh II Plus??low Qg Power MOSFET in a PowerFLAT??5x6 HV package March 2014 Rev 2
	STL18N60M2	946Kb / 16P	N-channel 600 V, 0.278 廓 typ., 9 A MDmesh II Plus??low Qg Power MOSFET in a PowerFLAT??5x6 HV package June 2014 Rev 1
	STFI40N60M2	1Mb / 21P	N-channel 600 V, 0.078 typ., 34 A MDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages
	STF40N60M2	1Mb / 22P	N-channel 600 V, 0.078 typ., 34 A MDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages
	STL9N60M2	1Mb / 16P	N-channel 600 V, 0.76 ??typ., 4.8 A MDmesh II Plus??low Qg Power MOSFET in a PowerFLAT??5x6 HV package March 2014 Rev 2
	STL24N60M2	1Mb / 16P	N-channel 600 V, 0.186 typ., 18 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT 8x8 HV package February 2014 Rev 2
	STF28N60M2	827Kb / 15P	N-channel 600 V, 0.135 typ., 22 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAKFP packages

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STB33N60M2 Fiches technique(PDF) 6 Page - STMicroelectronics

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