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STB13NM60N Fiches technique(PDF) 1 Page - STMicroelectronics |
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STB13NM60N Fiches technique(HTML) 1 Page - STMicroelectronics |
1 / 24 page This is information on a product in full production. June 2015 DocID024095 Rev 3 1/24 STB13NM60N, STD13NM60N N-channel 600 V, 0.28 Ω typ., 11 A MDmesh™ II Power MOSFETs in D²PAK and DPAK packages Datasheet — production data Figure 1. Internal schematic diagram Features • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. DPAK 1 3 TAB 1 3 TAB D²PAK Order code VDS (@Tjmax) RDS(on) max ID STB13NM60N 650 V 0.36 Ω 11 A STD13NM60N Table 1. Device summary Order code Marking Packages Packaging STB13NM60N 13NM60N D²PAK Tape and reel STD13NM60N DPAK www.st.com |
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