Electrical characteristics

STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5

4/22

DocID024850 Rev 3

2

Electrical characteristics

(Tcase =25 °C unless otherwise specified)

Table 4. On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V

(BR)DSS

Drain-source breakdown

voltage

I

D

= 1 mA, V

GS

= 0

950

V

I

DSS

Zero gate voltage, V

GS

= 0

drain current

V

DS

= 950 V

1

μA

V

DS

= 950 V, T

C

=125 °C

50

μA

I

GSS

Gate-body leakage

current

V

GS

= ± 20 V; V

DS

=0

±10

μA

V

GS(th)

Gate threshold voltage

V

DS

= V

GS

, I

D

= 100 μA

345

V

R

DS(on)

Static drain-source on-

resistance

V

GS

= 10 V, I

D

= 4 A

0.65

0.8

Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

C

iss

Input capacitance

V

DS

=100 V, f=1 MHz, V

GS

=0

-630

-

pF

C

oss

Output capacitance

-

50

-

pF

C

rss

Reverse transfer

capacitance

-0.6

-

pF

C

o(tr)

(1)

1.

Time related is defined as a constant equivalent capacitance giving the same charging time as C

oss

when

V

DS

increases from 0 to 80% V

DSS

Equivalent capacitance time

related

V

GS

= 0, V

DS

= 0 to 760 V

-77

-

pF

C

o(er)

(2)

2.

energy related is defined as a constant equivalent capacitance giving the same stored energy as C

oss

when V

DS

increases from 0 to 80% V

DSS

Equivalent capacitance

energy related

-28

-

pF

R

G

Intrinsic gate resistance

f = 1 MHz open drain

-

6.5

-

Ω

Q

g

Total gate charge

V

DD

= 760 V, I

D

= 8 A

V

GS

=10 V

(see Figure 20)

-22

-

nC

Q

gs

Gate-source charge

-

5

-

nC

Q

gd

Gate-drain charge

-

15

-

nC