BCW30_13 datasheet(2/4 Pages) BILIN

No de pièce	BCW30

Description	PNP General Purpose Amplifier

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Fabricant	BILIN [Galaxy Semi-Conductor Holdings Limited]

Site Internet	http://www.galaxycn.com

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Production specification

PNP General Purpose Amplifier

BCW30

C103

www.gmicroelec.com

Rev.B

2

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Test conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=-10μA IE=0

-32

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=-2mA IB=0

-32

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-10μA IC=0

-5

V

Collector cut-off current

ICBO

VCB=-32V IE=0

-0.1

μ

A

Emitter cut-off current

IEBO

VEB=-5V,IC=0

-0.1

μ

A

DC current gain

hFE

VCE=-5V IC=-10µA

VCE=-5V IC=-2mA

215

150

500

Collector-emitter saturation voltage

VCE(sat)

IC=-10mA IB=-0.5mA

IC=-50mA IB=-2.5mA

-0.08

-0.15

-0.3

V

Base-emitter on voltage

VBE(on)

IC=-2mA,VCE=-5V

-0.6

-0.7

V

Collector capacitance

Cob

VCB=-10V IE=-0 f=1MHz

4.5

pF

Transition frequency

fT

IC=-10mA,VCE=-5V,

f=100MHz

100

MHz

Noise figure

F

IC=-200µA,VCE=-5V,RS=2kΩ,

f=1kHz,B=200Hz

10

dB

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

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