STPSC15H12-Y datasheet(1/8 Pages) STMICROELECTRONICS

No de pièce	STPSC15H12-Y

Description	Robust high voltage periphery

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January 2017

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This is information on a product in full production.

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STPSC15H12-Y

Automotive grade 1200 V power Schottky silicon carbide diode

Datasheet - production data

Features



AEC-Q101 qualified



No or negligible reverse recovery



Switching behavior independent of

temperature



Robust high voltage periphery



PPAP capable



Operating Tj from -40 °C to 175 °C

Description

The SiC diode, available in TO-220AC, is an

ultrahigh performance power Schottky rectifier. It

is manufactured using a silicon carbide substrate.

The wide band-gap material allows the design of

a low VF Schottky diode structure with a 1200 V

rating. Due to the Schottky construction, no

recovery is shown at turn-off and ringing patterns

are negligible. The minimal capacitive turn-off

behavior is independent of temperature.

Especially suited for use in PFC and secondary

side applications, this ST SiC diode will boost the

performance in hard switching conditions. This

rectifier will enhance the performance of the

targeted application. Its high forward surge

capability ensures a good robustness during

transient phases.

Table 1: Device summary

Symbol

Value

IF(AV)

15 A

VRRM

1200 V

Tj (max.)

175 °C

VF (typ.)

1.35 V

A

K

A

K

TO-220AC

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