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TCMT1104 Fiches technique(PDF) 2 Page - Vishay Siliconix |
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TCMT1104 Fiches technique(HTML) 2 Page - Vishay Siliconix |
2 / 9 page TCMT110. Series www.vishay.com Vishay Semiconductors Rev. 3.0, 10-Mar-16 2 Document Number: 83510 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to reflow profile for soldering conditions for surface mounted devices. Also refer to “Assembly Instructions” (www.vishay.com/doc?80054). Note • Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 6V Forward current IF 60 mA Forward surge current tp ≤ 10 μs IFSM 1.5 A Power dissipation Pdiss 100 mW Junction temperature Tj 125 °C OUTPUT Collector emitter voltage VCEO 70 V Emitter collector voltage VECO 7V Collector current IC 50 mA Collector peak current tp/T = 0.5, tp ≤ 10 ms ICM 100 mA Power dissipation Pdiss 150 mW Junction temperature Tj 125 °C COUPLER AC isolation test voltage (RMS) Related to standard climate 23/50 DIN 50014 VISO 3750 VRMS Total power dissipation Ptot 250 mW Operating ambient temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg - 40 to + 125 °C Soldering temperature (1) Tsld 260 °C ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage IF = 50 mA VF 1.35 1.6 V Junction capacitance VR = 0, f = 1 MHz Cj 8pF OUTPUT Collector emitter voltage IC = 100 μA VCEO 70 V Emitter collector voltage IE = 100 μA VECO 7V Collector dark current VCE = 20 V, IF = 0 A ICEO 100 nA COUPLER Collector emitter saturation voltage IF = 10 mA, IC = 1 mA VCEsat 0.3 V Cut-off frequency VCE = 5 V, IF = 10 mA, RL = 100 Ω fc 100 kHz Coupling capacitance f = 1 MHz Ck 0.3 pF |
Numéro de pièce similaire - TCMT1104 |
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Description similaire - TCMT1104 |
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