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TCMT1104 Fiches technique(PDF) 2 Page - Vishay Siliconix

No de pièce TCMT1104
Description  Optocoupler, Phototransistor Output, Single Channel, Half Pitch Mini-Flat Package
Download  9 Pages
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Fabricant  VISHAY [Vishay Siliconix]
Site Internet  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

TCMT1104 Fiches technique(HTML) 2 Page - Vishay Siliconix

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TCMT110. Series
www.vishay.com
Vishay Semiconductors
Rev. 3.0, 10-Mar-16
2
Document Number: 83510
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to reflow profile for soldering conditions for surface mounted devices. Also refer to “Assembly Instructions”
(www.vishay.com/doc?80054).
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
6V
Forward current
IF
60
mA
Forward surge current
tp
≤ 10 μs
IFSM
1.5
A
Power dissipation
Pdiss
100
mW
Junction temperature
Tj
125
°C
OUTPUT
Collector emitter voltage
VCEO
70
V
Emitter collector voltage
VECO
7V
Collector current
IC
50
mA
Collector peak current
tp/T = 0.5, tp
≤ 10 ms
ICM
100
mA
Power dissipation
Pdiss
150
mW
Junction temperature
Tj
125
°C
COUPLER
AC isolation test voltage (RMS)
Related to standard climate 23/50
DIN 50014
VISO
3750
VRMS
Total power dissipation
Ptot
250
mW
Operating ambient temperature range
Tamb
- 40 to + 100
°C
Storage temperature range
Tstg
- 40 to + 125
°C
Soldering temperature (1)
Tsld
260
°C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = 50 mA
VF
1.35
1.6
V
Junction capacitance
VR = 0, f = 1 MHz
Cj
8pF
OUTPUT
Collector emitter voltage
IC = 100 μA
VCEO
70
V
Emitter collector voltage
IE = 100 μA
VECO
7V
Collector dark current
VCE = 20 V, IF = 0 A
ICEO
100
nA
COUPLER
Collector emitter saturation voltage
IF = 10 mA, IC = 1 mA
VCEsat
0.3
V
Cut-off frequency
VCE = 5 V, IF = 10 mA,
RL = 100
Ω
fc
100
kHz
Coupling capacitance
f = 1 MHz
Ck
0.3
pF


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