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BGA2012 Datasheet(Fiches technique) 2 Page - NXP Semiconductors

Numéro de pièce BGA2012
Description  1900 MHz high linear low noise amplifier
Télécharger  12 Pages
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
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BGA2012 Datasheet(HTML) 2 Page - NXP Semiconductors

 
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2000 Dec 04
2
Philips Semiconductors
Product specification
1900 MHz high linear low noise amplifier
BGA2012
FEATURES
• Low current, low voltage
• High linearity
• High power gain
• Low noise
• Integrated temperature compensated biasing
• Control pin for adjustment bias current.
APPLICATIONS
• RF front end
• Low noise amplifiers, e.g. CDMA, PHs, Dect, etc.
DESCRIPTION
Silicon Monolitic Microwave Integrated Circuit (MMIC)
amplifier consisting of an NPN double polysilicon transistor
with integrated biasing for low voltage applications in a
6-pin SOT363 plastic SMD package.
PINNING
PIN
DESCRIPTION
1
RF in
2VC
3VS
4
RF out
5, 6
GND
handbook, halfpage
Top view
MBL251
BIAS
CIRCUIT
RF in
RF out
GND
VS
VC
13
2
4
5
6
Fig.1 Simplified outline (SOT363) and symbol.
Marking code: A6-
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VS
DC supply voltage
RF input AC coupled
3
4.5
V
IS
DC supply current
7.5
mA
IC
DC control current
VC =VS
0.11
mA
|s21|2
insertion power gain
in application circuit, see Fig.2;
f = 1900 MHz
16
dB
NF
noise figure
IS = 7 mA; f = 1900 MHz
1.7
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VS
DC supply voltage
RF input AC coupled
4.5
V
VC
voltage on control pin
VS
V
IS
supply current
forced by DC voltage on RF input
15
mA
IC
control current
0.25
mA
Ptot
total power dissipation
Ts ≤ 100 °C
70
mW
Tstg
storage temperature
−65
+150
°C
Tj
operating junction temperature
150
°C


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