Moteur de recherche de fiches techniques de composants électroniques
  French  ▼
ALLDATASHEET.FR

X  

SI4398DY Fiches technique(PDF) 2 Page - Vishay Siliconix

No de pièce SI4398DY
Description  N-Channel Reduced Qg, Fast Switching MOSFET
Download  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  VISHAY [Vishay Siliconix]
Site Internet  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI4398DY Fiches technique(HTML) 2 Page - Vishay Siliconix

  SI4398DY Datasheet HTML 1Page - Vishay Siliconix SI4398DY Datasheet HTML 2Page - Vishay Siliconix SI4398DY Datasheet HTML 3Page - Vishay Siliconix SI4398DY Datasheet HTML 4Page - Vishay Siliconix SI4398DY Datasheet HTML 5Page - Vishay Siliconix SI4398DY Datasheet HTML 6Page - Vishay Siliconix  
Zoom Inzoom in Zoom Outzoom out
 2 / 6 page
background image
www.vishay.com
2
Document Number: 73018
S11-0209-Rev. C, 14-Feb-11
Vishay Siliconix
Si4398DY
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
1.0
3.0
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 20 V, VGS = 0 V
1
µA
VDS = 20 V, VGS = 0 V, TJ = 55 °C
5
On-State Drain Currenta
ID(on)
VDS ≥ 5 V, VGS = 10 V
50
A
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 25 A
0.0023
0.0028
Ω
VGS = 4.5 V, ID = 22 A
0.0033
0.0040
Forward Transconductancea
gfs
VDS = 10 V, ID = 15 A
95
S
Diode Forward Voltagea
VSD
IS = 2.9 A, VGS = 0 V
0.72
1.1
V
Dynamicb
Input Capacitance
Ciss
VDS = 10 V, VGS = 0 V, f = 1 MHz
5620
pF
Output Capacitance
Coss
1340
Reverse Transfer Capacitance
Crss
540
Total Gate Charge
Qg
VDS = 10 V, VGS = 4.5 V, ID = 20 A
34
50
nC
Gate-Source Charge
Qgs
17.5
Gate-Drain Charge
Qgd
7.5
Gate Resistance
Rg
0.7
1.4
2.1
Ω
Turn-On Delay Time
td(on)
VDD = 10 V, RL = 10 Ω
ID ≅ 1 A, VGEN = 4.5 V, Rg = 6 Ω
23
35
ns
Rise Time
tr
15
23
Turn-Off Delay Time
td(off)
80
120
Fall Time
tf
23
35
Source-Drain Reverse Recovery Time
trr
IF = 2.9 A, dI/dt = 100 A/µs
50
80
Output Characteristics
0
10
20
30
40
50
60
012345
VGS = 10 V thru 4 V
VDS - Drain-to-Source Voltage (V)
Transfer Characteristics
0
10
20
30
40
50
60
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
25 °C
TC = 125 °C
-55 °C
VGS - Gate-to-Source Voltage (V)


Numéro de pièce similaire - SI4398DY

FabricantNo de pièceFiches techniqueDescription
logo
Vishay Siliconix
SI4390DY VISHAY-SI4390DY Datasheet
44Kb / 5P
   N-Channel Qg, Fast Switching WFET
Rev. B, 19-May-03
SI4390DY-T1 VISHAY-SI4390DY-T1 Datasheet
44Kb / 5P
   N-Channel Qg, Fast Switching WFET
Rev. B, 19-May-03
SI4392DY VISHAY-SI4392DY Datasheet
55Kb / 5P
   N-Channel Reduced Qg, Fast Switching WFET
Rev. D, 26-Jul-04
SI4392DY VISHAY-SI4392DY Datasheet
101Kb / 6P
   N-Channel Reduced Qg, Fast Switching WFET®
Rev. E, 12-Jun-06
SI4392DY-E3 VISHAY-SI4392DY-E3 Datasheet
55Kb / 5P
   N-Channel Reduced Qg, Fast Switching WFET
Rev. D, 26-Jul-04
More results

Description similaire - SI4398DY

FabricantNo de pièceFiches techniqueDescription
logo
Vishay Siliconix
SI7860DP-T1 VISHAY-SI7860DP-T1 Datasheet
147Kb / 7P
   N-Channel Reduced Qg, Fast Switching MOSFET
Rev. E, 09-Feb-09
SI4872DY VISHAY-SI4872DY Datasheet
57Kb / 4P
   N-Channel Reduced Qg, Fast Switching MOSFET
Rev. A, 17-Jul-00
SI4850EY VISHAY-SI4850EY Datasheet
61Kb / 4P
   N-Channel Reduced Qg, Fast Switching MOSFET
Rev. D, 29-Mar-04
SI6802DQ VISHAY-SI6802DQ Datasheet
59Kb / 4P
   N-Channel, Reduced Qg, Fast Switching MOSFET
Rev. C, 18-Dec-96
logo
DinTek Semiconductor Co...
DTB6035 DINTEK-DTB6035 Datasheet
235Kb / 6P
   N-Channel Reduced Qg, Fast Switching MOSFET
logo
Vishay Siliconix
SI4800BDY VISHAY-SI4800BDY Datasheet
252Kb / 9P
   N-Channel Reduced Qg, Fast Switching MOSFET
Rev. H, 29-Dec-08
SI4800BDY VISHAY-SI4800BDY_17 Datasheet
185Kb / 8P
   N-Channel Reduced Qg, Fast Switching MOSFET
Rev. H, 29-Dec-08
SI7384DP VISHAY-SI7384DP Datasheet
96Kb / 6P
   N-Channel Reduced Qg, Fast Switching MOSFET
Rev. C, 03-Mar-08
SI4800BDY-T1 VISHAY-SI4800BDY-T1 Datasheet
252Kb / 9P
   N-Channel Reduced Qg, Fast Switching MOSFET
Rev. H, 29-Dec-08
SI9422DY VISHAY-SI9422DY Datasheet
53Kb / 4P
   N-Channel Reduced Qg, Fast Switching MOSFET
Rev. D, 23-Nov-98
More results


Html Pages

1 2 3 4 5 6


Fiches technique Télécharger

Go To PDF Page


Lien URL




Politique de confidentialité
ALLDATASHEET.FR
ALLDATASHEET vous a-t-il été utile ?  [ DONATE ] 

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Echange de liens   |   Fabricants
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com