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SI4398DY Fiches technique(PDF) 2 Page - Vishay Siliconix |
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SI4398DY Fiches technique(HTML) 2 Page - Vishay Siliconix |
2 / 6 page www.vishay.com 2 Document Number: 73018 S11-0209-Rev. C, 14-Feb-11 Vishay Siliconix Si4398DY Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.0 3.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 1 µA VDS = 20 V, VGS = 0 V, TJ = 55 °C 5 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 50 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 25 A 0.0023 0.0028 Ω VGS = 4.5 V, ID = 22 A 0.0033 0.0040 Forward Transconductancea gfs VDS = 10 V, ID = 15 A 95 S Diode Forward Voltagea VSD IS = 2.9 A, VGS = 0 V 0.72 1.1 V Dynamicb Input Capacitance Ciss VDS = 10 V, VGS = 0 V, f = 1 MHz 5620 pF Output Capacitance Coss 1340 Reverse Transfer Capacitance Crss 540 Total Gate Charge Qg VDS = 10 V, VGS = 4.5 V, ID = 20 A 34 50 nC Gate-Source Charge Qgs 17.5 Gate-Drain Charge Qgd 7.5 Gate Resistance Rg 0.7 1.4 2.1 Ω Turn-On Delay Time td(on) VDD = 10 V, RL = 10 Ω ID ≅ 1 A, VGEN = 4.5 V, Rg = 6 Ω 23 35 ns Rise Time tr 15 23 Turn-Off Delay Time td(off) 80 120 Fall Time tf 23 35 Source-Drain Reverse Recovery Time trr IF = 2.9 A, dI/dt = 100 A/µs 50 80 Output Characteristics 0 10 20 30 40 50 60 012345 VGS = 10 V thru 4 V VDS - Drain-to-Source Voltage (V) Transfer Characteristics 0 10 20 30 40 50 60 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 25 °C TC = 125 °C -55 °C VGS - Gate-to-Source Voltage (V) |
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