SI4354DY datasheet(4/6 Pages) VISHAY

No de pièce	SI4354DY

Description	N-Channel 30-V (D-S) MOSFET

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Fabricant	VISHAY [Vishay Siliconix]

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Document Number: 72967

S09-0392-Rev. C, 09-Mar-09

Vishay Siliconix

Si4354DY

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Threshold Voltage

- 0.8

- 0.6

- 0.4

- 0.2

0.0

0.2

0.4

- 50

- 25

0

25

50

75

100

125

150

ID = 250 µA

TJ - Temperature (°C)

Single Pulse Power, Junction-to-Ambient

0

18

30

6

12

Time (s)

24

1

1000

10

10- 1

10- 2

100

Safe Operating Area

100

1

0.1

1

10

100

0.01

10

TA = 25 °C

Single Pulse

0.1

ID(on)

Limited

DS(on)

*

Limited by R

BVDSS Limited

1 s

10 ms

100 ms

dc

10 s

1 ms

VDS - Drain-to-Source Voltage (V)

*VGS > minimum VGS at which RDS(on) is specified

IDM Limited

Normalized Thermal Transient Impedance, Junction-to-Ambient

10- 3

10- 2

1

10

600

10- 1

10- 4

100

2

1

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Square Wave Pulse Duration (s)

1. Duty Cycle, D =

2. Per Unit Base = R thJA = 71 °C/W

3. T JM - TA = PDMZthJA(t)

t1

t2

t1

t2

Notes:

4. Surface Mounted

PDM

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Fabricant	No de pièce	Fiches technique	Description
Vishay Siliconix	SI3456DV	61Kb / 4P	N-Channel 30-V (D-S) MOSFET Rev. B, 23-Nov-98
	SUU50N03-12P	60Kb / 4P	N-Channel 30-V (D-S) MOSFET Rev. A, 15-Sep-03
	SI4894DY	129Kb / 3P	N-Channel 30-V (D-S) MOSFET 17-May-04
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	SI7380DP	180Kb / 3P	N-Channel 30-V (D-S) MOSFET 24-May-04
	SI733ADP	61Kb / 5P	N-Channel 30-V (D-S) MOSFET Rev. A, 25-Oct-04
	SI4892DY	71Kb / 4P	N-Channel 30-V (D-S) MOSFET Rev. F, 01-Aug-05
Vaishali Semiconductor	SI4356ADY	143Kb / 3P	N-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SIRA00DP	513Kb / 13P	N-Channel 30 V (D-S) MOSFET Rev. A, 13-Feb-12
	SIRA04DP	513Kb / 13P	N-Channel 30 V (D-S) MOSFET Rev. A, 13-Feb-12
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