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SI7674DP Fiches technique(PDF) 1 Page - Vishay Siliconix

No de pièce SI7674DP
Description  N-Channel 30 V (D-S) MOSFET
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Fabricant  VISHAY [Vishay Siliconix]
Site Internet  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI7674DP Fiches technique(HTML) 1 Page - Vishay Siliconix

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Vishay Siliconix
Si7674DP
Document Number: 73562
S110212-Rev. C, 14-Feb-11
www.vishay.com
1
N-Channel 30 V (D-S) MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
Extremely Low Qgd for Switching Losses
100 % Rg Tested
100 % Capacitance Tested
100 % Avalanche Tested
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
Core DC/DC in Notebooks
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
ID (A)
a
Qg (Typ.)
30
0.0033 at VGS = 10 V
40
37 nC
0.0046 at VGS = 4.5 V
40
Ordering Information: Si7674DP-T1-E3 (Lead (Pb)-free)
Si7674DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
6.15 mm
5.15 mm
PowerPAK SO-8
Bottom View
N-Channel MOSFET
G
D
S
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 65 °C/W.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
40
A
TC = 70 °C
32
TA = 25 °C
31b, c
TA = 70 °C
25b, c
Pulsed Drain Current
IDM
70
Continuous Source-Drain Diode Current
TC = 25 °C
IS
40
TA = 25 °C
4.9b, c
Single Pulse Avalanche Current
L = 0.1 mH
IAS
40
Single Pulse Avalanche Energy
EAS
80
mJ
Maximum Power Dissipation
TC = 25 °C
PD
83
W
TC = 70 °C
53
TA = 25 °C
5.4b, c
TA = 70 °C
3.4b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)d, e
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
t
≤ 10 s
RthJA
18
23
°C/W
Maximum Junction-to-Case (Drain)
Steady State
RthJC
1.0
1.5


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