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2SC5788 Fiches technique(PDF) 1 Page - Panasonic Semiconductor

No de pièce 2SC5788
Description  Silicon NPN epitaxial planar type
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Fabricant  PANASONIC [Panasonic Semiconductor]
Site Internet  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

2SC5788 Fiches technique(HTML) 1 Page - Panasonic Semiconductor

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Power Transistors
1
Publication date: November 2002
SJD00290AED
2SC5788
Silicon NPN epitaxial planar type
Power supply for Audio & Visual equipments
such as TVs and VCRs
Industrial equipments such as DC-DC converters
■ Features
• High-speed switching (t
stg: storage time/tf: fall time is short)
• Low collector to emitter saturation voltage V
CE(sat)
• Superior forward current transfer ratio h
FE linearity
• Allowing automatic insertion with radial taping
■ Absolute Maximum Ratings T
C
= 25°C
■ Electrical Characteristics T
C = 25°C ± 3°C
10.0±0.2
0.65±0.1
0.35±0.1
2.5±0.2
123
0.65±0.1
1.2±0.1
1.48±0.2
2.25±0.2
C 1.0
0.55±0.1
0.55±0.1
2.5±0.2
1.05±0.1
5.0±0.1
1.0
±0.2
Unit: mm
1: Base
2: Collector
3: Emitter
MT-4-A1 Package
Rank
P
Q
hFE1
160 to 320
120 to 250
Internal Connection
B
C
E
Marking Symbol: C5788
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
60
V
Collector-emitter voltage (Base open)
VCEO
60
V
Emitter-base voltage (Collector open)
VEBO
6V
Collector current
IC
3A
Peak collector current
ICP
6A
Collector power
TC = 25°CPC
15
W
dissipation
Ta = 25°C2
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 ∼ +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC = 10 mA, IB = 060
V
Collector-base cutoff current (Emitter open)
ICBO
VCB
= 60 V, I
E
= 0
100
µA
Collector-emitter cutoff current (Base open)
ICEO
VCE = 60 V, IB = 0
100
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB = 6 V, IC = 01
mA
Forward current transfer ratio
hFE1*
VCE
= 4 V, I
C
= 1 A
120
320
hFE2
VCE = 4 V, IC = 3 A
40
Collector-emitter saturation voltage
VCE(sat)
IC = 3 A, IB = 375 mA
0.8
V
Transition frequency
fT
VCE
= 10 V, I
C
= 0.1 A, f = 10 MHz
180
MHz
Turn-on time
ton
IC = 1 A, Resistance loaded
0.2
0.3
µs
Storage time
tstg
IB1 = 0.1 A, IB2 = − 0.1 A
0.55
0.7
µs
Fall time
tf
VCC
= 50 V
0.1
0.15
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification


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