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SI7880ADP Fiches technique(PDF) 3 Page - Vishay Siliconix |
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SI7880ADP Fiches technique(HTML) 3 Page - Vishay Siliconix |
3 / 13 page Document Number: 73414 S-80438-Rev. B, 03-Mar-08 www.vishay.com 3 Vishay Siliconix Si7880ADP TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0 10 20 30 40 50 60 70 0.0 0.3 0.6 0.9 1.2 1.5 VGS = 10 thru 3 V VDS - Drain-to-Source Voltage (V) 3 V 0.0020 0.0024 0.0028 0.0032 0.0036 0.0040 0 102030405060 ID - Drain Current (A) VGS = 2.5 V VGS = 4.5 V 0 2 4 6 8 10 0 1734516885 Qg - Total Gate Charge (nC) VDS = 10 V VDS = 20 V VDS = 15 V Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 TC = 125 °C - 55 °C VGS - Gate-to-Source Voltage (V) 25 °C 0 1360 2720 4080 5440 6800 0 5 10 15 20 25 30 Crss Coss Ciss VDS - Drain-to-Source Voltage (V) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 VGS = 10 V TJ - Junction Temperature (°C) VGS = 4.5 V ID = 20 A |
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