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SI7726DN Fiches technique(PDF) 6 Page - Vishay Siliconix

No de pièce SI7726DN
Description  N-Channel 30-V (D-S) MOSFET with Schottky Diode
Download  14 Pages
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Fabricant  VISHAY [Vishay Siliconix]
Site Internet  http://www.vishay.com
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SI7726DN Fiches technique(HTML) 6 Page - Vishay Siliconix

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Document Number: 68600
S-81737-Rev. B, 04-Aug-08
Vishay Siliconix
Si7726DN
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
12
24
36
48
60
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Package Limited
Power, Junction-to-Case
0
13
26
39
52
65
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Power, Junction-to-Ambient
0.0
0.4
0.8
1.2
1.6
2.0
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)


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