SI7315DN datasheet(4/13 Pages) VISHAY

No de pièce	SI7315DN

Description	P-Channel 150 V (D-S) MOSFET

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Document Number: 62895

S13-1816-Rev. A, 12-Aug-13

Vishay Siliconix

Si7315DN

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: pmostechsupport@vishay.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Source-Drain Diode Forward Voltage

Threshold Voltage

0.1

1

10

100

0.0

0.3

0.6

0.9

1.2

V

SD - Source-to-Drain Voltage (V)

T

J = 150 °C

T

J = 25 °C

2.1

2.4

2.7

3

3.3

3.6

- 50

- 25

0

25

50

75

100

125

150

T

J - Temperature (°C)

I

D = 250 μA

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0

0.2

0.4

0.6

0.8

2

4

6

8

10

V

GS - Gate-to-Source Voltage (V)

T

J = 125 °C

T

J = 25 °C

I

D = 2.4A

0

30

50

10

20

Time (s)

40

10

1

0.1

100

0.01

Safe Operating Area, Junction-to-Ambient

0.001

0.01

0.1

1

10

100

0.1

1

10

100

1000

V

DS - Drain-to-Source Voltage (V)

* V

GS > minimum VGS at which RDS(on) is specified

100 ms

Limited by R

DS(on)*

1 ms

T

A = 25 °C

Single Pulse

BVDSS Limited

10 ms

100 μs

10s, 1 s

DC,

I

DM

limited

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